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Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

United States Patent

February 16, 1999
View the Complete Patent at the US Patent & Trademark Office
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A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.
Bhattacharya; Raghu N. (Littleton, CO), Hasoon; Falah S. (Arvada, CO), Wiesner; Holm (Golden, CO), Keane; James (Lakewood, CO), Noufi; Rommel (Golden, CO), Ramanathan; Kannan (Golden, CO)
Davis, Joseph & Negley (Austin, TX)
08/ 870,081
June 5, 1997
The government has rights in this invention pursuant to National Renewable Energy Laboratory (NREL) contract No. 1326.