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Method for altering the luminescence of a semiconductor

United States Patent

January 12, 1999
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region.
Barbour; J. Charles (Albuquerque, NM), Dimos; Duane B. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
07/ 964,739
October 21, 1992
The United States Government has rights in this invention pursuant to Contract No. DE-AC04-76DP00789 between the Department of Energy and American Telephone and Telegraph Company.