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Diamond film growth argon-carbon plasmas

United States Patent

December 15, 1998
View the Complete Patent at the US Patent & Trademark Office
Argonne National Laboratory - Visit the Technology Development and Commercialization Website
A method and system for manufacturing diamond film. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrogen and hydrocarbon and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous and deposition of a diamond film on a substrate.
Gruen; Dieter M. (Downers Grove, IL), Krauss; Alan R. (Naperville, IL), Liu; Shengzhong (Canton, MI), Pan; Xianzheng (Wuhan Hubei, CN), Zuiker; Christopher D. (LaGrange, IL)
The University of Chicago (Chicago, IL)
08/ 417,154
April 4, 1995
The United States Government has rights in this invention pursuant to Contract W-31-109-ENG-38 between the U.S. Department of Energy and the University of Chicago.