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Photodetectors using III-V nitrides

United States Patent

December 8, 1998
View the Complete Patent at the US Patent & Trademark Office
A bandpass photodetector using a III-V nitride and having predetermined electrical properties. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal.
Moustakas; Theodore D. (Dover, MA)
Trustees of Boston University (Boston, MA)
08/ 681,971
July 30, 1996
Portions of this invention were made with United States Government support under Grant No. DE-FG02-94ER81843 awarded by the Department of Energy, and the Government may have certain rights in the invention.