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Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

United States Patent

*** EXPIRED ***
5,840,620
November 24, 1998
View the Complete Patent at the US Patent & Trademark Office
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A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.
Seager; Carleton H. (Albuquerque, NM), Evans, Jr.; Joseph Tate (Albuquerque, NM)
08/ 577,851
December 22, 1995
This invention was made with U.S. Government support under contract DEAC04-94AL8500awarded by the U.S. Department of Energy. The Government has certain rights in the invention.