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Method for formation of thin film transistors on plastic substrates

United States Patent

*** EXPIRED ***
October 6, 1998
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.
Carey; Paul G. (Mountain View, CA), Smith; Patrick M. (San Ramon, CA), Sigmon; Thomas W. (Portola Valley, CA), Aceves; Randy C. (Livermore, CA)
Regents of the University of California (Oakland, CA)
08/ 611,318
March 5, 1996
The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the Unites States Department of Energy and the University of California for the oper Lawrence Livermore National Laboratory.