Skip to Content
Find More Like This
Return to Search

Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas

United States Patent

*** EXPIRED ***
July 7, 1998
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
A method of producing hydrogenated amorphous silicon on a substrate by flowing a stream of safe (diluted to less than 1%) silane gas past a heated filament.
Mahan; Archie Harvin (Golden, CO), Molenbroek; Edith C. (Boulder, CO), Nelson; Brent P. (Golden, CO)
Midwest Research Institute (Kansas City, MO)
08/ 222,720
May 25, 1994
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention under Contract No. DE-AC02-83CH10093 between the U.S. Department of Energy and the Solar Energy Research Institute, a Division of Midwest Research Institute.