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Diode and method of making the same

United States Patent

9,917,149
March 13, 2018
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.
Dickerson; Jeramy Ray (Albuquerque, NM), Wierer, Jr.; Jonathan (Coopersburg, PA), Kaplar; Robert (Albuquerque, NM), Allerman; Andrew A. (Tijeras, NM)
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
15/ 166,783
May 27, 2016
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.