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Synthesis of silicon containing materials using liquid hydrosilane compositions through direct injection

United States Patent

March 13, 2018
View the Complete Patent at the US Patent & Trademark Office
An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrative apparatus has a precursor solution and carrier gas system, atomizer and deposit head with interior chamber and a hot plate supporting the substrate. Atomized liquid silane precursor solutions and carrier gas moves through a confined reaction zone that may be heated and the aerosol and vapor are deposited on a substrate to form a thin film. The substrate may be heated prior to deposition. The deposited film may be processed further with thermal or laser processing.
Srinivasan; Guruvenket (Fargo, ND), Sailer; Robert A. (West Fargo, ND), Hoey; Justin (Fargo, ND)
14/ 853,462
September 14, 2015
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with Government support under DE-FG36-08G088160 awarded by the United States Department of Energy. The Government has certain rights in the invention.