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Reducing leakage current in semiconductor devices

United States Patent

March 6, 2018
View the Complete Patent at the US Patent & Trademark Office
A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.
Lu; Bin (Boston, MA), Matioli; Elison de Nazareth (Cambridge, MA), Palacios; Tomas Apostol (Belmont, MA)
Massachusetts Institute of Technology (Cambridge, MA)
14/ 651,012
December 11, 2013
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with Government support under Grant No. DE-AR0000123 awarded by U.S. Department of Energy and under Contract No. FA8721-05-C-0002 awarded by the U.S. Air Force. The Government has certain rights in the invention.