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Metal-assisted etch combined with regularizing etch

United States Patent

9,911,878
March 6, 2018
View the Complete Patent at the US Patent & Trademark Office
In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.
Yim; Joanne (San Francisco, CA), Miller; Jeff (Brookline, MA), Jura; Michael (Santa Monica, CA), Black; Marcie R. (Salem, NH), Forziati; Joanne (Everett, MA), Murphy; Brian (Revere, MA), Magliozzi; Lauren (Denver, CO)
Advanced Silicon Group, Inc. (Lincoln, MA)
14/ 917,698
August 27, 2014
FEDRALLY SPONSORED RESEARCH This invention was made with government support under Contract No. DE-EE0005323 (BA) awarded by the U.S. Department of Energy. The government has certain rights in the invention.