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Tunnel barrier schottky

United States Patent

February 20, 2018
View the Complete Patent at the US Patent & Trademark Office
A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.
Chu; Rongming (Agoura Hills, CA), Cao; Yu (Agoura Hills, CA), Li; Zijian (Thousand Oaks, CA), Williams; Adam J. (Malibu, CA)
HRL Laboratories, LLC (Malibu, CA)
15/ 093,710
April 7, 2016
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT The present invention was made with government support under Contract No. DE-AR0000450 awarded by the Department of Energy. The government has certain rights to the present invention.