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Gallium beam lithography for superconductive structure formation

United States Patent

January 30, 2018
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
The present invention relates to the use of gallium beam lithography to form superconductive structures. Generally, the method includes exposing a surface to gallium to form an implanted region and then removing material adjacent to and/or below that implanted region. In particular embodiments, the methods herein provide microstructures and nanostructures in any useful substrate, such as those including niobium, tantalum, tungsten, or titanium.
Henry; Michael David (Albuquerque, NM), Lewis; Rupert M. (Albuquerque, NM)
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
14/ 742,505
June 17, 2015
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.