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High throughput semiconductor deposition system

United States Patent

November 21, 2017
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
High Throughput Semiconductor Deposition System
A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.
Young; David L. (Golden, CO), Ptak; Aaron Joseph (Littleton, CO), Kuech; Thomas F. (Madison, WI), Schulte; Kevin (Madison, WI), Simon; John D. (Golden, CO)
Alliance for Sustainable Energy, LLC (Golden, CO), Wisconsin Alumni Research Foundation (Madison, WI)
14/ 801,551
July 16, 2015
CONTRACTUAL ORIGIN The United States Government has rights in this invention under Contract No. DE-AC36-08GO28308 between the United States Department of Energy and the National Renewable Energy Laboratory managed and operated by Alliance for Sustainable Energy, LLC,