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Semiconductor composition containing iron, dysprosium, and terbium

United States Patent

September 26, 2017
View the Complete Patent at the US Patent & Trademark Office
Oak Ridge National Laboratory - Visit the Partnerships Directorate Website
An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.
Pooser; Raphael C. (Knoxville, TN), Lawrie; Benjamin J. (Oak Ridge, TN), Baddorf; Arthur P. (Knoxville, TN), Malasi; Abhinav (Knoxville, TN), Taz; Humaira (Knoxville, TN), Farah; Annettee E. (Knoxville, TN), Kalyanaraman; Ramakrishnan (Knoxville, TN), Duscher; Gerd Josef Mansfred (Knoxville, TN), Patel; Maulik K. (Knoxville, TN)
UT-Battelle, LLC (Oak Ridge, TN)
15/ 194,715
June 28, 2016
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH The United States Government has rights in this invention pursuant to contract no. DE-AC05-000R22725 between the United States Department of Energy and UT-Battelle, LLC.