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Fluorinated tin oxide back contact for AZTSSe photovoltaic devices

United States Patent

March 28, 2017
View the Complete Patent at the US Patent & Trademark Office
A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.
Gershon; Talia S. (White Plains, NY), Gunawan; Oki (Westwood, NJ), Haight; Richard A. (Mahopac, NY), Lee; Yun Seog (White Plains, NY)
14/ 968,252
December 14, 2015
FEDERALLY SPONSORED RESEARCH AND DEVELOPMENT This invention was made with government support under contract number DE-EE0006334 awarded by the Department of Energy. The government may have certain rights in the invention.