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High quality group-III metal nitride crystals, methods of making, and methods of use

United States Patent

March 7, 2017
View the Complete Patent at the US Patent & Trademark Office
High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.
Jiang; Wenkan (Santa Barbara, CA), D'Evelyn; Mark P. (Santa Barbara, CA), Kamber; Derrick S. (Goleta, CA), Ehrentraut; Dirk (Santa Barbara, CA), Krames; Michael (Mountain View, CA)
Soraa, Inc. (Fremont, CA)
14/ 089,281
November 25, 2013
GOVERNMENT LICENSE RIGHTS Certain embodiments disclosed herein were made with partial government support under Grant IIP-1026896, awarded by the U.S. National Science Foundation, and Cooperative Agreement DE-AR0000020, awarded by the U.S. Advanced Research Projects Agency--Energy. The government has certain rights in the invention.