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Transparent group III metal nitride and method of manufacture

United States Patent

January 10, 2017
View the Complete Patent at the US Patent & Trademark Office
Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.
Jiang; Wenkan (Corona, CA), Ehrentraut; Dirk (Santa Barbara, CA), D'Evelyn; Mark P. (Santa Barbara, CA)
Soraa, Inc. (Fremont, CA)
14/ 485,516
September 12, 2014
GOVERNMENT LICENSE RIGHTS This invention was made with partial government support under Grant IIP-1026896, awarded by the U.S. National Science Foundation, and Cooperative Agreement DE-AR0000020, awarded by the U.S. Advanced Research Projects Agency-Energy. The government has certain rights in the invention.