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Semiconductor ferroelectric compositions and their use in photovoltaic devices

United States Patent

November 1, 2016
View the Complete Patent at the US Patent & Trademark Office
Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.
Rappe; Andrew M (Penn Valley, PA), Davies; Peter K (Newtown, PA), Spanier; Jonathan E (Bala Cynwyd, PA), Grinberg; Ilya (Fair Lawn, NJ), West; Don Vincent (Minneapolis, MN)
The Trustees Of The University Of Pennsylvania (Philadelphia, PA), Drexel University (Philadelphia, PA)
13/ 649,154
October 11, 2012
STATEMENT OF GOVERNMENT SUPPORT The inventions disclosed herein were made using financial support from the following U.S. Federal Grants: U.S. Department of Energy (DE-FG02-07ER46431), U.S. Office of Naval Research (N00014-09-1-0157), U.S. Army Research Office (W911-NF-08-1-0067), and NSF Division of Materials Research (DMR 0907381).