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Methods for dry etching semiconductor devices

United States Patent

November 1, 2016
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl.sub.3, a common additive.
Bauer; Todd (Albuquerque, NM), Gross; Andrew John (Redwood City, CA), Clews; Peggy J. (Tijeras, NM), Olsson; Roy H. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
14/ 728,810
June 2, 2015
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.