Skip to Content
Find More Like This
Return to Search

Controlling the stoichiometry and doping of semiconductor materials

United States Patent

August 16, 2016
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
Stoichiometry Control and Doping of II-VI Semiconductors
Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.
Albin; David (Denver, CO), Burst; James (Lakewood, CO), Metzger; Wyatt (Louisville, CO), Duenow; Joel (Golden, CO), Farrell; Stuart (Wheat Ridge, CO), Colegrove; Eric (Denver, CO)
Alliance for Sustainable Energy, LLC (Golden, CO)
14/ 615,068
February 5, 2015
CONTRACTUAL ORIGIN The United States Government has rights in this invention under Contract No. DEAC36-08GO28308 between the United States Department of Energy and the Alliance for Sustainable Energy, LLC, the Manager and Operator of the National Renewable Energy Laboratory.