Skip to Content
Find More Like This
Return to Search

Transistor having increased breakdown voltage

United States Patent

June 28, 2016
View the Complete Patent at the US Patent & Trademark Office
A transistor includes a source finger electrode having a source finger electrode beginning and a source finger electrode end. The transistor also includes a drain finger electrode with a curved drain finger electrode end having an increased radius of curvature. The resulting decreased electric field at the curved drain finger electrode end allows for an increased breakdown voltage and a more robust and reliable transistor.
Briere; Michael A. (Scottsdale, AZ), Thapar; Naresh (San Diego, CA), Garg; Reenu (Torrance, CA)
Infineon Technologies Americas Corp. (El Segundo, CA)
13/ 749,477
January 24, 2013
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-AR0000016 awarded by Advanced Research Projects Agency-Energy (ARPA-E). The Government has certain rights in this invention.