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GaAs thin films and methods of making and using the same

United States Patent

June 14, 2016
View the Complete Patent at the US Patent & Trademark Office
Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.
Boettcher; Shannon (Eugene, OR), Ritenour; Andrew (Sunnyvale, CA), Boucher; Jason (Eugene, OR), Greenaway; Ann (Eugene, OR)
University of Oregon (Eugene, OR)
14/ 692,421
April 21, 2015
ACKNOWLEDGMENT OF GOVERNMENT SUPPORT This invention was made with government support under contract No. DE-EE0005957 awarded by The United States Department of Energy. The government has certain rights in the invention.