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Thin film bismuth iron oxides useful for piezoelectric devices

United States Patent

May 31, 2016
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.
Zeches; Robert J. (San Francisco, CA), Martin; Lane W. (Champaign, IL), Ramesh; Ramamoorthy (Moraga, CA)
The Regents of the University of California (Oakland, CA)
12/ 916,209
October 29, 2010
STATEMENT OF GOVERNMENTAL SUPPORT This invention was made with government support under Contract No. DE-ACO2-05CH11231 awarded by the U.S. Department of Energy. The government has certain rights in the invention