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Methods of producing strain in a semiconductor waveguide and related devices

United States Patent

February 16, 2016
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
Quasi-phase matched (QPM), semiconductor photonic waveguides include periodically-poled alternating first and second sections. The first sections exhibit a high degree of optical coupling (abbreviated "X.sup.2"), while the second sections have a low X.sup.2. The alternating first and second sections may comprise high-strain and low-strain sections made of different material states (such as crystalline and amorphous material states) that exhibit high and low X.sup.2 properties when formed on a particular substrate, and/or strained corrugated sections of different widths. The QPM semiconductor waveguides may be implemented as silicon-on-insulator (SOI), or germanium-on-silicon structures compatible with standard CMOS processes, or as silicon-on-sapphire (SOS) structures.
Cox; Johathan Albert (Albuquerque, NM), Rakich; Peter Thomas (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
14/ 012,877
August 28, 2013
GOVERNMENT LICENSE RIGHTS This invention was developed under Contract DE-AC04-94AL85000 between Sandia Corporation and the U.S. Department of Energy. The U.S. Government has certain rights in this invention.