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Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

United States Patent

September 8, 2015
View the Complete Patent at the US Patent & Trademark Office
Oak Ridge National Laboratory - Visit the Partnerships Directorate Website
In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.
Tour; James M. (Bellaire, TX), Yao; Jun (Houston, TX), Natelson; Douglas (Houston, TX), Zhong; Lin (Houston, TX), He; Tao (Zhongguancun, CN)
14/ 050,589
October 10, 2013
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH This invention was made with Government support under grant number CNS-0720825, awarded by the National Science Foundation; grant number DE-FC-36-05-GO15073, awarded by the Department of Energy; grant number DE-AC05-000R22725, awarded by the Department of Energy; grant number W911NF-08-C-0019, awarded by the Department of Defense; and grant number W911NF-08-C-0133, awarded by the Department of Defense. The Government has certain rights in the invention.