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Method for passively compensating for temperature coefficient of gain in silicon photomultipliers and similar devices

United States Patent

September 1, 2015
View the Complete Patent at the US Patent & Trademark Office
Thomas Jefferson National Accelerator Facility - Visit the Technology Review Committee Website
A method for designing a completely passive bias compensation circuit to stabilize the gain of multiple pixel avalanche photo detector devices. The method includes determining circuitry design and component values to achieve a desired precision of gain stability. The method can be used with any temperature sensitive device with a nominally linear coefficient of voltage dependent parameter that must be stabilized. The circuitry design includes a negative temperature coefficient resistor in thermal contact with the photomultiplier device to provide a varying resistance and a second fixed resistor to form a voltage divider that can be chosen to set the desired slope and intercept for the characteristic with a specific voltage source value. The addition of a third resistor to the divider network provides a solution set for a set of SiPM devices that requires only a single stabilized voltage source value.
McKisson; John E. (Williamsburg, VA), Barbosa; Fernando (Toano, VA)
Jefferson Science Associates, LLC (Newport News, VA)
14/ 063,627
October 25, 2013
The United States government may have certain rights to this invention under Management and Operating Contract No. DE-AC05-060R23177 from Department of Energy.