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Room temperature aluminum antimonide radiation detector and methods thereof

United States Patent

March 3, 2015
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H.sub.2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).
Lordi; Vincenzo (Livermore, CA), Wu; Kuang Jen J. (Cupertino, CA), Aberg; Daniel (Livermore, CA), Erhart; Paul (Dublin, CA), Coombs, III; Arthur W. (Livermore, CA), Sturm; Benjamin W. (Pleasanton, CA)
Lawrence Livermore National Security, LLC (Livermore, CA)
12/ 774,388
May 5, 2010
The United States Government has rights in this invention pursuant to Contract No. DE-AC52-07NA27344 between the United States Department of Energy and Lawrence Livermore National Security, LLC for the operation of Lawrence Livermore National Laboratory.