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Room-temperature magnetoelectric multiferroic thin films and applications thereof

United States Patent

August 12, 2014
View the Complete Patent at the US Patent & Trademark Office
The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.
Katiyar; Ram S (Guaynabo, PR), Kumar; Ashok (San Juan, PR), Scott; James F (Cambridge, GB)
University of Puerto Rico (San Juan, PR)
13/ 118,275
May 27, 2011
GOVERNMENT INTEREST The claimed invention was made with U.S. Government support under grant numbers W911NF-05-1-0340, W911NF-06-1-0030, and W911NF-06-1-0183 awarded by the Department of Defense (DOD) and grant number FG 02-08ER46526 awarded by the Department of Energy (DoE). The government has certain rights in this invention.