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Atomic layer deposition of quaternary chalcogenides

United States Patent

June 3, 2014
View the Complete Patent at the US Patent & Trademark Office
Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu.sub.2ZnSnS.sub.4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.
Thimsen; Elijah J. (Chicago, IL), Riha; Shannon C. (Park Ridge, IL), Martinson; Alex B. F. (Woodridge, IL), Elam; Jeffrey W. (Elmhurst, IL), Pellin; Michael J. (Naperville, IL)
Uchicago Argonne, LLC (Chicago, IL)
13/ 631,135
September 28, 2012
STATEMENT OF GOVERNMENT INTEREST The United States Government has rights in the invention described herein pursuant to Contract No. DE-AC02-06CH11357 between the United States Department of Energy and UChicago Argonne, LLC, as operator of Argonne National Laboratory.