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Growth and transfer of monolithic horizontal nanowire superstructures onto flexible substrates

United States Patent

August 27, 2013
View the Complete Patent at the US Patent & Trademark Office
In a method of making a monolithic elongated nanowire, a mask polymer layer is applied to a selected crystal surface of a seed crystal. A plurality of spaced apart elongated openings is defined through the mask polymer layer, thereby exposing a corresponding plurality of portions of the crystal surface. The openings are disposed so as to be aligned with and parallel to a selected crystal axis of the seed crystal. The portions of the crystal surface are subjected to a chemical nutrient environment that causes crystalline material to grow from the plurality of portions for at least a period of time so that monocrystalline members grow from the elongated openings and until the monocrystalline members laterally expand so that each monocrystalline member grows into and merges with an adjacent one of the monocrystalline members, thereby forming a monolithic elongated nanowire.
Wang; Zhong L. (Marietta, GA), Xu; Sheng (Atlanta, GA)
Georgia Tech Research Corporation (Atlanta, GA)
12/ 980,666
December 29, 2010
STATEMENT OF GOVERNMENT INTEREST This invention was made with government support under contract No. Department of Energy, awarded by the DE-FG02-07ER46394. The government has certain rights in the invention.