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Method to reduce dislocation density in silicon using stress

United States Patent

March 5, 2013
View the Complete Patent at the US Patent & Trademark Office
A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.
Buonassisi; Anthony (Cambridge, MA), Bertoni; Mariana (Somerville, MA), Argon; Ali (Belmont, MA), Castellanos; Sergio (Sonora, MX), Fecych; Alexandria (Somerville, MA), Powell; Douglas (Highland Heights, OH), Vogl; Michelle (Dekalb, IL)
Massachusetts Institute of Technology (Cambridge, MA)
12/ 892,370
September 28, 2010
SPONSORSHIP INFORMATION This invention was made with Government support under Grant No. DE-FG36-09GO19001, awarded by the Department of Energy. The Government has certain rights in this invention.