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Strained layer superlattice focal plane array having a planar structure

United States Patent

October 23, 2012
View the Complete Patent at the US Patent & Trademark Office
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An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 .mu.m.
Kim; Jin K. (Albuquerque, NM), Carroll; Malcolm S. (Albuquerque, NM), Gin; Aaron (Albuquerque, NM), Marsh; Phillip F. (Lowell, MA), Young; Erik W. (Albuquerque, NM), Cich; Michael J. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
12/ 815,714
June 15, 2010
GOVERNMENT RIGHTS This invention was made with Government support under Contract No. DE-AC04-94AL85000 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.