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Method of fabricating conductive electrodes on the front and backside of a thin film structure

United States Patent

May 22, 2012
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
A method of fabricating a thin film device having conductive front and backside electrodes or contacts. Top-side cavities are first formed on a first dielectric layer, followed by the deposition of a metal layer on the first dielectric layer to fill the cavities. Defined metal structures are etched from the metal layer to include the cavity-filled metal, followed by depositing a second dielectric layer over the metal structures. Additional levels of defined metal structures may be formed in a similar manner with vias connecting metal structures between levels. After a final dielectric layer is deposited, a top surface of a metal structure of an uppermost metal layer is exposed through the final dielectric layer to form a front-side electrode, and a bottom surface of a cavity-filled portion of a metal structure of a lowermost metal layer is also exposed through the first dielectric layer to form a back-side electrode.
Tabada; Phillipe J. (Roseville, CA), Tabada, legal representative; Melody (Roseville, CA), Pannu; Satinderpall S. (Pleasanton, CA)
Lawrence Livermore National Security, LLC (Livermore, CA)
12/ 959,232
December 2, 2010
II. FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT The United States Government has rights in this invention pursuant to Contract No. DE-AC52-07NA27344 between the United States Department of Energy and Lawrence Livermore National Security, LLC for the operation of Lawrence Livermore National Laboratory.