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Diamondoid monolayers as electron emitters

United States Patent

April 10, 2012
View the Complete Patent at the US Patent & Trademark Office
SLAC National Accelerator Laboratory - Visit the Technology Transfer Website
Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.
Yang; Wanli (El Cerrito, CA), Fabbri; Jason D. (San Francisco, CA), Melosh; Nicholas A. (Menlo Park, CA), Hussain; Zahid (Orinda, CA), Shen; Zhi-Xun (Stanford, CA)
The Board of Trustees of the Leland Stanford Junior University (Stanford, CA), The Regents of the University of California (Oakland, CA)
11/ 704,910
February 12, 2007
STATEMENT OF GOVERNMENTAL SUPPORT The invention described and claimed herein was made in part utilizing funds supplied by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The Government has certain rights in this invention. Federally-Sponsored Research or Development This invention was made with Government support under contracts DE-AC03-76SF00098, DE-AC02-76SF00515 awarded by the Department of Energy, 0304981 awarded by the National Science Foundation, and N00014-04-1-0048 awarded by the Office of Naval Research. The Government has certain rights in this invention.