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Extreme temperature robust optical sensor designs and fault-tolerant signal processing

United States Patent

January 17, 2012
View the Complete Patent at the US Patent & Trademark Office
Silicon Carbide (SiC) probe designs for extreme temperature and pressure sensing uses a single crystal SiC optical chip encased in a sintered SiC material probe. The SiC chip may be protected for high temperature only use or exposed for both temperature and pressure sensing. Hybrid signal processing techniques allow fault-tolerant extreme temperature sensing. Wavelength peak-to-peak (or null-to-null) collective spectrum spread measurement to detect wavelength peak/null shift measurement forms a coarse-fine temperature measurement using broadband spectrum monitoring. The SiC probe frontend acts as a stable emissivity Black-body radiator and monitoring the shift in radiation spectrum enables a pyrometer. This application combines all-SiC pyrometry with thick SiC etalon laser interferometry within a free-spectral range to form a coarse-fine temperature measurement sensor. RF notch filtering techniques improve the sensitivity of the temperature measurement where fine spectral shift or spectrum measurements are needed to deduce temperature.
Riza; Nabeel Agha (Oviedo, FL), Perez; Frank (Tujunga, CA)
Nusensors, Inc. (Tujunga, CA), University of Central Florida (Orlando, FL)
12/ 468,359
May 19, 2009
This invention was made with United States Government support awarded by the following agencies: US Department of Energy (DOE) Grant No: DE-FC26-03NT41923. The United States has certain rights in this invention.