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Nanometer-scale ablation using focused, coherent extreme ultraviolet/soft x-ray light

United States Patent

April 26, 2011
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
Ablation of holes having diameters as small as 82 nm and having clean walls was obtained in a poly(methyl methacrylate) on a silicon substrate by focusing pulses from a Ne-like Ar, 46.9 nm wavelength, capillary-discharge laser using a freestanding Fresnel zone plate diffracting into third order is described. Spectroscopic analysis of light from the ablation has also been performed. These results demonstrate the use of focused coherent EUV/SXR light for the direct nanoscale patterning of materials.
Menoni; Carmen S. (Fort Collins, CO), Rocca; Jorge J. (Fort Collins, CO), Vaschenko; Georgiy (San Diego, CA), Bloom; Scott (Encinitas, CA), Anderson; Erik H. (El Cerrito, CA), Chao; Weilun (El Cerrito, CA), Hemberg; Oscar (Stockholm, SE)
Colorado State University Research Foundation (Fort Collins, CO), The Regents of University of California (Oakland, CA), JMAR Technologies, Inc. (San Diego, CA)
12/ 861,627
August 23, 2010
STATEMENT REGARDING FEDERAL RIGHTS This invention was made with government support under the Engineering Research Centers Program of the National Science Foundation under NSF award EEC-0310717, and under Contract No. DE-AC02-05CH11231 awarded to the Lawrence Berkeley National Laboratory by the U.S. Department of Energy. The government has certain rights in the invention.