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Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers

United States Patent

March 8, 2011
View the Complete Patent at the US Patent & Trademark Office
Oak Ridge National Laboratory - Visit the Partnerships Directorate Website
A dual-chamber reactor can include a housing enclosing a volume having a divider therein, where the divider defines a first chamber and a second chamber. The divider can include a substrate holder that supports at least one substrate and exposes a first side of the substrate to the first chamber and a second side of the substrate to the second chamber. The first chamber can include an inlet for delivering at least one reagent to the first chamber for forming a film on the first side of the substrate, and the second chamber can include a removal device for removing material from the second side of the substrate.
Kulkarni; Nagraj S. (Knoxville, TN), Kasica; Richard J. (Ashburn, VA)
The United States of America as represented by the United States Department of Energy (Washington, DC), N/A (
12/ 180,280
July 25, 2008
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT The United States Government has rights in this invention pursuant to Contract No. DE-AC05-00OR22725 between the United States Department of Energy and UT-Battelle, LLC.