Skip to Content
Find More Like This
Return to Search

Megavoltage imaging with a photoconductor based sensor

United States Patent

February 8, 2011
View the Complete Patent at the US Patent & Trademark Office
Y-12 National Security Complex - Visit the Technology Transfer Website
A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.
Partain; Larry Dean (Los Altos, CA), Zentai; George (Mountain View, CA)
Varian Medical Systems, Inc. (Palo Alto, CA)
11/ 193,162
July 29, 2005
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention is made with Government support under Subcontract No. 4300039024-BWXT Y-12; Contract No. DE-AC05-00OR22800 awarded by the Department of Energy. The Government has certain rights in this invention.