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Trench process and structure for backside contact solar cells with polysilicon doped regions

United States Patent

December 14, 2010
View the Complete Patent at the US Patent & Trademark Office
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.
De Ceuster; Denis (Woodside, CA), Cousins; Peter John (Menlo Park, CA), Smith; David D. (Campbell, CA)
SunPower Corporation (San Jose, CA)
12/ 392,923
February 25, 2009
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT The invention described herein was made with Governmental support under contract number DE-FC36-07G017043 awarded by the United States Department of Energy. The Government may have certain rights in the invention.