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Silicon-based visible and near-infrared optoelectric devices

United States Patent

August 24, 2010
View the Complete Patent at the US Patent & Trademark Office
In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.
Mazur; Eric (Concord, MA), Carey, III; James E. (Newton, MA)
President and Fellows of Harvard College (Cambridge, MA)
12/ 365,492
February 4, 2009
FEDERALLY SPONSORED RESEARCH The invention was made with Government support under contract DE-FC36-016011051 awarded by Department of Energy (DOE). The Government has certain rights in the invention.