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Internal gettering by metal alloy clusters

United States Patent

July 27, 2010
View the Complete Patent at the US Patent & Trademark Office
The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.
Buonassisi; Anthony (San Diego, CA), Heuer; Matthias (Berkeley, CA), Istratov; Andrei A. (Albany, CA), Pickett; Matthew D. (Berkeley, CA), Marcus; Mathew A. (Berkeley, CA), Weber; Eicke R. (Piedmont, CA)
The Regents of the University of California (Oakland, CA)
11/ 447,223
June 5, 2006
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with government support under Grant (Contract) No. ATT-2-31605-03 awarded by the Department of Energy. The Government has certain rights to this invention.