Skip to Content
Find More Like This
Return to Search

Deposition of dopant impurities and pulsed energy drive-in

United States Patent

January 1, 2008
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.
Wickboldt; Paul (Walnut Creek, CA), Carey; Paul G. (Mountain View, CA), Smith; Patrick M. (San Jose, CA), Ellingboe; Albert R. (Malahide, IE)
The Regents of the University of California (Oakland, CA)
10/ 768,656
June 29, 2001
The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.