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Method for rapid, controllable growth and thickness, of epitaxial silicon films

United States Patent

October 13, 2009
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.
Wang; Qi (Littleton, CO), Stradins; Paul (Golden, CO), Teplin; Charles (Boulder, CO), Branz; Howard M. (Boulder, CO)
Alliance for Sustainable Energy, LLC (Golden, CO)
11/ 560,886
November 17, 2006
CONTRACTUAL ORIGIN The United States Government has rights in this invention under Contract No. DE-AC36-99GO10337 between the United States Department of Energy and the National Renewable Energy Laboratory, a Division of the Midwest Research Institute.