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Method for double-sided processing of thin film transistors

United States Patent

April 8, 2008
View the Complete Patent at the US Patent & Trademark Office
This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
Yuan; Hao-Chih (Madison, WI), Wang; Guogong (Madison, WI), Eriksson; Mark A. (Madison, WI), Evans; Paul G. (Madison, WI), Lagally; Max G. (Madison, WI), Ma; Zhenqiang (Middleton, WI)
Wisconsin Alumi Research Foundation (Madison, WI)
11/ 276,065
February 13, 2006
STATEMENT OF GOVERNMENT RIGHTS Research funding was provided for this invention by the U.S. Army under grant number W911NF-04-1-0389; U.S. Department of Energy under grant number DE-FG02-03ER46028; and the National Science Foundation under grant number 0079983. The United States government has certain rights in this invention.