Skip to Content
Find More Like This
Return to Search

Method and apparatus for forming conformal SiN.sub.x films

United States Patent

November 27, 2007
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
A silicon nitride film formation method includes: Heating a substrate to be subjected to film formation to a substrate temperature; heating a wire to a wire temperature; supplying silane, ammonia, and hydrogen gases to the heating member; and forming a silicon nitride film on the substrate.
Wang; Qi (Littleton, CO)
Midwest Research Institute (Kansas City, MO)
10/ 621,712
July 17, 2003
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention pursuant to Contract No. DE-AC36-99GO10337 between the U.S. Department of Energy and the Midwest Research Institute.