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Method to repair localized amplitude defects in a EUV lithography mask blank

United States Patent

November 22, 2005
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
A method and apparatus are provided for the repair of an amplitude defect in a multilayer coating. A significant number of layers underneath the amplitude defect are undamaged. The repair technique restores the local reflectivity of the coating by physically removing the defect and leaving a wide, shallow crater that exposes the underlying intact layers. The particle, pit or scratch is first removed the remaining damaged region is etched away without disturbing the intact underlying layers.
Stearns; Daniel G. (Los Altos, CA), Sweeney; Donald W. (Livermore, CA), Mirkarimi; Paul B. (Sunol, CA), Chapman; Henry N. (Livermore, CA)
The EUV Limited Liability Corporation (Santa Clara, CA)
09/ 896,722
June 29, 2001
The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.