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Method to fabricate multi-level silicon-based microstructures via use of an etching delay layer

United States Patent

August 16, 2005
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Structures having features with different depth can be formed thereby in a single etching step.
Manginell; Ronald P. (Albuquerque, NM), Schubert; W. Kent (Albuquerque, NM), Shul; Randy J. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
10/ 165,861
June 6, 2002
GOVERNMENT RIGHTS This invention was made with Government support under Contract DE-AC04-94AL85000 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.