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Maskless micro-ion-beam reduction lithography system

United States Patent

May 3, 2005
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.
Leung; Ka-Ngo (Hercules, CA), Barletta; William A. (Oakland, CA), Patterson; David O. (Annandale, VA), Gough; Richard A. (Kensington, CA)
The Regents of the University of California (Oakland, CA)
09/ 289,332
April 9, 1999
GOVERNMENT RIGHTS The United States Government has rights in this invention pursuant to Contract No. DE-AC03-76SF00098 between the United States Department of Energy and the University of California.