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Method for forming an epitaxial cobalt silicide layer on MOS devices

United States Patent

September 28, 2004
View the Complete Patent at the US Patent & Trademark Office
A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.
Lim; Chong Wee (Urbana, IL), Shin; Chan Soo (Daejeon, KR), Gall; Daniel (Troy, NY), Petrov; Ivan Georgiev (Champaign, IL), Greene; Joseph E. (Champaign, IL)
The Board of Trustees of the University of Illinois (Urbana, IL)
10/ 226,101
August 22, 2002
STATEMENT OF GOVERNMENT INTEREST This invention was made with United States government assistance through the U.S. Department of Energy Grant No. DEFG02-ER-45439. The government has certain rights in this invention.